Importance of Vacancies and Doping in the Hole-Transporting Nickel Oxide Interface with Halide Perovskites-Reference-Cited by-同舟云学术

Importance of Vacancies and Doping in the Hole-Transporting Nickel Oxide Interface with Halide Perovskites

Published:2020-01-09 Issue:5 Volume:12 Page:6633-6640
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Traore Boubacar¹²^ORCID,Pedesseau Laurent¹^ORCID,Blancon Jean-Christophe³,Tretiak Sergei⁴^ORCID,Mohite Aditya D.³^ORCID,Even Jacky¹^ORCID,Katan Claudine²^ORCID,Kepenekian Mikaël²

Affiliation:

1. Univ Rennes, INSA Rennes, CNRS, Institut FOTON − UMR 6082, F-35000 Rennes, France

2. Univ Rennes, ENSCR, CNRS, ISCR − UMR 6226, F-35000 Rennes, France

3. Department of Chemical and Biomolecular Engineering, Rice University, Houston, Texas 77005, United States

4. Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States

Funder

Agence Nationale de la Recherche

H2020 Future and Emerging Technologies

Laboratory Directed Research and Development

Institut Universitaire de France

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b19457

Reference72 articles.

1. Dielectric Effects at Organic/Inorganic Interfaces in Nanostructured Devices

2. Halide Perovskites: Is It All about the Interfaces?

3. Recent progress and perspective in solution-processed Interfacial materials for efficient and stable polymer and organometal perovskite solar cells

4. Recent advances in solution-processed interfacial materials for efficient and stable polymer solar cells

5. Solution deposited NiO thin-films as hole transport layers in organic photovoltaics

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