Defect Engineering of MoS2 for Room-Temperature Terahertz Photodetection-Reference-Cited by-同舟云学术

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Defect Engineering of MoS2 for Room-Temperature Terahertz Photodetection

Published:2020-01-20 Issue:6 Volume:12 Page:7351-7357
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Xie Ying¹,Liang Fei¹^ORCID,Chi Shumeng¹,Wang Dong²,Zhong Kai³,Yu Haohai¹^ORCID,Zhang Huaijin¹,Chen Yanxue²,Wang Jiyang¹

Affiliation:

1. State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, China

2. School of Physics, Shandong University, Jinan 250100, China

3. Key Laboratory of Opto-electronics Information Technology (Ministry of Education), Tianjin University, Tianjin 300072, China

Funder

Ministry of Science and Technology of the People's Republic of China

Shandong Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b21671

Reference34 articles.

1. Two-dimensional flexible nanoelectronics

2. Graphene and Graphene-like Two-Dimensional Materials in Photodetection: Mechanisms and Methodology

3. Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus

4. Spin–valley locking in the normal state of a transition-metal dichalcogenide superconductor

5. Vapor–Solid Growth of High Optical Quality MoS2 Monolayers with Near-Unity Valley Polarization

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2. Significant Enhancement in THz Emission and Piezoelectricity in Atomically Thin Nb-Doped MoS₂;ACS Applied Materials & Interfaces;2024-08-23

3. Research Advances and Perspectives on Terahertz Detection based on 2D Materials;Advanced Physics Research;2024-08-22

4. Impact of device resistances in the performance of graphene-based terahertz photodetectors;Frontiers of Optoelectronics;2024-06-12

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