Topological Phase Control of Surface States in Bi2Se3 via Spin–Orbit Coupling Modulation through Interface Engineering between HfO2–X
Author:
Affiliation:
1. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
Funder
Samsung
Yonsei University
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.9b17555
Reference60 articles.
1. Thickness-Independent Transport Channels in Topological InsulatorBi2Se3Thin Films
2. Spin and charge transport in the presence of spin-orbit interaction
3. Electronic transport properties of topological insulator films and low dimensional superconductors
4. The birth of topological insulators
5. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
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