Low Contact Barrier in 2H/1T′ MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Low Contact Barrier in 2H/1T′ MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

Published:2019-03-11 Issue:13 Volume:11 Page:12777-12785
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhang Xiang^ORCID,Jin Zehua^ORCID,Wang Luqing,Hachtel Jordan A.¹^ORCID,Villarreal Eduardo,Wang Zixing^ORCID,Ha Teresa²,Nakanishi Yusuke^ORCID,Tiwary Chandra Sekhar³,Lai Jiawei,Dong Liangliang,Yang Jihui,Vajtai Robert⁴^ORCID,Ringe Emilie^ORCID,Idrobo Juan Carlos¹,Yakobson Boris I.,Lou Jun^ORCID,Gambin Vincent²^ORCID,Koltun Rachel²,Ajayan Pulickel M.

Affiliation:

1. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

2. NG Next, Northrop Grumman Corporation, Redondo Beach, California 90278, United States

3. Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, West Bengal 721301, India

4. Interdisciplinary Excellence Centre, Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Béla tér1., Szeged, Hungary

Funder

Welch Foundation

Defense Advanced Research Projects Agency

Air Force Office of Scientific Research

Microelectronics Advanced Research Corporation

Office of Naval Research

National Natural Science Foundation of China