Influence of Film Thickness and Oxygen Partial Pressure on Cation-Defect-Induced Intrinsic Ferromagnetic Behavior in Luminescent p-Type Na-Doped ZnO Thin Films-Reference-Cited by-同舟云学术

Influence of Film Thickness and Oxygen Partial Pressure on Cation-Defect-Induced Intrinsic Ferromagnetic Behavior in Luminescent p-Type Na-Doped ZnO Thin Films

Published:2013-03-19 Issue:7 Volume:5 Page:2455-2461
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ghosh S.¹,Khan Gobinda Gopal¹,Varma Shikha²,Mandal K.¹

Affiliation:

1. Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Salt Lake City, Kolkata 700 098, India

2. Institute of Physics, Bhubaneswar 751005, India.

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am302649r

Reference38 articles.

1. The quest for dilute ferromagnetism in semiconductors: Guides and misguides by theory

2. Paramagnetism in single-phase Sn1−xCoxO2 dilute magnetic semiconductors

3. Magnetoelectronics

4. Making Nonmagnetic Semiconductors Ferromagnetic

5. Unexpected magnetism in a dielectric oxide

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