Infrared Imaging of the Nanometer-Thick Accumulation Layer in Organic Field-Effect Transistors-Reference-Cited by-同舟云学术

Infrared Imaging of the Nanometer-Thick Accumulation Layer in Organic Field-Effect Transistors

Published:2006-01-05 Issue:2 Volume:6 Page:224-228
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Li Z. Q.¹,Wang G. M.¹,Sai N.¹,Moses D.¹,Martin M. C.¹,Di Ventra M.¹,Heeger A. J.¹,Basov D. N.¹

Affiliation:

1. Department of Physics, University of California, San Diego, La Jolla, California 92093, Institute for Polymers and Organic Solids and Mitsubishi Chemical Center for Advanced Materials, University of California, Santa Barbara, Santa Barbara, California 93106, and Advanced Light Source Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl052166%2B

Reference26 articles.

1. Electronic properties of two-dimensional systems

2. Introduction to Nanoscale Science and Technology; Di Ventra, M., Evoy, S., Heflin, R. Eds.; Kluwer Academic Publishers: Dordrecht, 2004.

3. Organic Thin Film Transistors for Large Area Electronics

4. Random networks of carbon nanotubes as an electronic material

5. Electronics using hybrid-molecular and mono-molecular devices

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