Atomic-Layer-Deposited TiOx Nanolayers Function as Efficient Hole-Selective Passivating Contacts in Silicon Solar Cells-Reference-Cited by-同舟云学术

Atomic-Layer-Deposited TiOx Nanolayers Function as Efficient Hole-Selective Passivating Contacts in Silicon Solar Cells

Published:2020-10-22 Issue:44 Volume:12 Page:49777-49785
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Matsui Takuya¹^ORCID,Bivour Martin²,Hermle Martin²,Sai Hitoshi¹^ORCID

Affiliation:

1. Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

2. Division Photovoltaics, Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, Freiburg 79110, Germany

Funder

New Energy and Industrial Technology Development Organization

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c14239

Reference41 articles.

1. Schottky Barrier Heights and the Continuum of Gap States

2. A New Route to Zero-Barrier Metal Source/Drain MOSFETs

3. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics

4. Passivating contacts for crystalline silicon solar cells

5. 24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer

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