Interfacial Thermal Conductance between Monolayer WSe2 and SiO2 under Consideration of Radiative Electron–Hole Recombination-Reference-Cited by-同舟云学术

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Interfacial Thermal Conductance between Monolayer WSe2 and SiO2 under Consideration of Radiative Electron–Hole Recombination

Published:2020-10-27 Issue:45 Volume:12 Page:51069-51081
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hunter Nicholas¹,Azam Nurul²,Zobeiri Hamidreza¹,Wang Ridong³,Mahjouri-Samani Masoud²^ORCID,Wang Xinwei¹^ORCID

Affiliation:

1. Department of Mechanical Engineering, Iowa State University, 2025 Black Engineering Building, Ames, Iowa 50011, United States

2. Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States

3. State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, P. R. China

Funder

National Science Foundation

Defense Microelectronics Activity

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c14990

Reference55 articles.

1. Recent development of two-dimensional transition metal dichalcogenides and their applications

2. Tunable band gaps in bilayer transition-metal dichalcogenides

3. Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

4. Integrated Circuits Based on Bilayer MoS2 Transistors

5. Optoelectronic properties of defective MoS2 and WS2 monolayers

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4. Self-Heating Effect in a MoS₂ Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer;ACS Applied Electronic Materials;2024-01-04

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