Controllable Epitaxial Growth of MoSe2 Bilayers with Different Stacking Orders by Reverse-Flow Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Controllable Epitaxial Growth of MoSe2 Bilayers with Different Stacking Orders by Reverse-Flow Chemical Vapor Deposition

Published:2020-04-28 Issue:20 Volume:12 Page:23347-23355
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Peng Gang¹,Yang Xi²,Wang Siyuan¹³,Zhang Jianyu¹,Qi Gongjin⁴,Zhang Sen¹^ORCID,Liu Ken²^ORCID,Zhu Zhi Hong²,Li Zheng³,Wang Guang¹^ORCID,Zhu Mengjian²^ORCID,Qin Shiqiao²

Affiliation:

1. College of Arts and Science, National University of Defense Technology, Changsha, Hunan 410073, People’s Republic of China

2. College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, Hunan 410073, People’s Republic of China

3. School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, People’s Republic of China

4. Beijing Aeronautical Technology Research Centre, Beijing 100076, People’s Republic of China

Funder

National University of Defense Technology

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c04411

Reference31 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Valley-selective circular dichroism of monolayer molybdenum disulphide

4. Control of valley polarization in monolayer MoS2 by optical helicity

5. Valley polarization in MoS2 monolayers by optical pumping

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