Low-Temperature 2D/2D Ohmic Contacts in WSe2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition-Reference-Cited by-同舟云学术

Low-Temperature 2D/2D Ohmic Contacts in WSe2 Field-Effect Transistors as a Platform for the 2D Metal–Insulator Transition

Published:2021-02-22 Issue:8 Volume:13 Page:10594-10602
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Stanley Lily J.¹²^ORCID,Chuang Hsun-Jen³,Zhou Zhixian³^ORCID,Koehler Michael R.⁴,Yan Jiaqiang⁴⁵^ORCID,Mandrus David G.⁴⁵^ORCID,Popović Dragana¹²^ORCID

Affiliation:

1. National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States

2. Department of Physics, Florida State University, Tallahassee, Florida 32306, United States

3. Physics and Astronomy Department, Wayne State University, Detroit, Michigan 48202, United States

4. Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, United States

5. Oak Ridge National Lab, Oak Ridge, Tennessee 37830, United States

Funder

Basic Energy Sciences

Division of Materials Research

State of Florida

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c21440

Reference68 articles.

1. Metallic behavior and related phenomena in two dimensions

2. Metal–insulator transition in two-dimensional electron systems

3. Colloquium: Transport in strongly correlated two dimensional electron fluids

4. Introduction to Metal–Insulator Transitions

5. Glassy Dynamics of Electrons Near the Metal–Insulator Transition

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