Reversal of the Direction of Rectification Induced by Fermi Level Pinning at Molecule–Electrode Interfaces in Redox-Active Tunneling Junctions-Reference-Cited by-同舟云学术

Reversal of the Direction of Rectification Induced by Fermi Level Pinning at Molecule–Electrode Interfaces in Redox-Active Tunneling Junctions

Published:2020-11-25 Issue:49 Volume:12 Page:55044-55055
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Han Yingmei¹,Maglione Maria Serena²,Diez Cabanes Valentin³,Casado-Montenegro Javier²,Yu Xiaojiang⁴,Karuppannan Senthil Kumar¹,Zhang Ziyu¹,Crivillers Núria²^ORCID,Mas-Torrent Marta²^ORCID,Rovira Concepció²^ORCID,Cornil Jérôme³^ORCID,Veciana Jaume²^ORCID,Nijhuis Christian A.¹⁵^ORCID

Affiliation:

1. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore

2. Institut de Ciéncia de Materials de Barcelona (ICMAB-CSIC)/CIBER-BBN, Campus de la UAB, Bellaterra 08193, Spain

3. Laboratory for Chemistry of Novel Materials, University of Mons, Place du Parc 20, Mons 7000, Belgium

4. Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603, Singapore

5. Centre for Advanced 2D Materials and Graphene Research Center, National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore

Funder

FP7 People: Marie-Curie Actions

Direcci?n General de Investigaci?n Cient?fica y T?cnica

Ministry of Education - Singapore

Ministerio de Econom?a y Competitividad

Fonds De La Recherche Scientifique - FNRS

Generalitat de Catalunya

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c15435

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4. Directional Excitation of Surface Plasmon Polaritons via Molecular Through-Bond Tunneling across Double-Barrier Tunnel Junctions

5. Plasmonic tunnel junctions for single-molecule redox chemistry

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