Atomic Layer Epitaxy of III-Nitrides: A Microscopic Model of Homoepitaxial Growth
Author:
Affiliation:
1. Center for Computational Materials Science, Naval Research Laboratory, Washington, District of Columbia 20375, United States
Funder
U.S. Naval Research Laboratory
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c14622
Reference49 articles.
1. Group III nitride semiconductors for short wavelength light-emitting devices
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5. Role of high nitrogen flux in InAlN growth by plasma-assisted molecular beam epitaxy
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