Improved Figure of Merit of Cu2SnSe3 via Band Structure Modification and Energy-Dependent Carrier Scattering-Reference-Cited by-同舟云学术

Improved Figure of Merit of Cu2SnSe3 via Band Structure Modification and Energy-Dependent Carrier Scattering

Published:2020-04-14 Issue:17 Volume:12 Page:19693-19700
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ming Hongwei¹²^ORCID,Zhu Chen¹²,Qin Xiaoying¹^ORCID,Zhang Jian¹^ORCID,Li Di¹^ORCID,Zhang Baoli¹,Chen Tao¹²,Li Jimin¹²,Lou Xunuo³,Xin Hongxin¹

Affiliation:

1. Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, 230031 Hefei, PR China

2. University of Science and Technology of China, 230026 Hefei, PR China

3. MIT Key Laboratory of Advanced Metalic and Intermetallic Materials Technology, Nanjing University of Science and Technology, 210094 Nanjing, PR China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c04298

Reference39 articles.

1. Cooling, Heating, Generating Power, and Recovering Waste Heat with Thermoelectric Systems

2. Dilute Cu2Te-alloying enables extraordinary performance of r-GeTe thermoelectrics

3. Vacancy Manipulation for Thermoelectric Enhancements in GeTe Alloys

4. Extraordinary Thermoelectric Performance Realized in n-Type PbTe through Multiphase Nanostructure Engineering

5. Convergence of electronic bands for high performance bulk thermoelectrics

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