Enhanced Photoinduced Carrier Generation Efficiency through Surface Band Bending in Topological Insulator Bi2Se3 Thin Films by the Oxidized Layer-Reference-Cited by-同舟云学术

Enhanced Photoinduced Carrier Generation Efficiency through Surface Band Bending in Topological Insulator Bi2Se3 Thin Films by the Oxidized Layer

Published:2020-05-13 Issue:23 Volume:12 Page:26649-26658
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hong Seok-Bo¹²,Kim Dae-Kyoung¹²^ORCID,Chae Jimin¹²,Kim Kiwoong³,Jeong Kwangsik¹²^ORCID,Kim Jonghoon¹²,Park Hanbum¹²,Yi Yeonjin³^ORCID,Cho Mann-Ho¹²^ORCID

Affiliation:

1. Department of Physics, Yonsei University, Seoul 03722, Republic of Korea

2. Atomic-scale Surface Science Center, Yonsei University, Seoul 03722, Republic of Korea

3. Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-go, Seoul 03722, Republic of Korea

Funder

Samsung

National Research Foundation of Korea

Yonsei University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c05165

Reference48 articles.

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2. Topological insulators for high-performance terahertz to infrared applications

3. Observation of Unconventional Quantum Spin Textures in Topological Insulators

4. The birth of topological insulators

5. Spintronics and pseudospintronics in graphene and topological insulators

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