Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal–Insulator–Metal Tunneling Devices-Reference-Cited by-同舟云学术

Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal–Insulator–Metal Tunneling Devices

Published:2020-07-08 Issue:31 Volume:12 Page:35318-35327
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

He Yanwei¹,Tian Hao¹^ORCID,Das Protik¹,Cui Zhenjun¹,Pena Pedro²,Chiang Ivan¹,Shi Wenhao¹,Xu Long¹^ORCID,Li Yuan¹,Yang Tianchen¹,Isarraraz Miguel¹,Ozkan Cengiz S.³⁴^ORCID,Ozkan Mihrimah¹,Lake Roger K.¹,Liu Jianlin¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, United States

2. Department of Chemistry, University of California, Riverside, California 92521, United States

3. Materials Science and Engineering Program, University of California, Riverside, California 92521, United States

4. Department of Mechanical Engineering, University of California, Riverside, California 92521, United States

Funder

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c07201

Reference67 articles.

1. Graphene-Based Supercapacitor with an Ultrahigh Energy Density

2. High-Performance Monolayer WS2Field-Effect Transistors on High-κ Dielectrics

3. Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

4. Fabrication of scalable and ultra low power photodetectors with high light/dark current ratios using polycrystalline monolayer MoS2 sheets

5. Hexagonal boron nitride is an indirect bandgap semiconductor

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-Principles Prediction of High and Low Resistance States in Ta/h-BN/Ta Atomristor;Nanomaterials;2024-03-30

2. The role of oxygen incorporation in Ni (111) substrates on the growth of hexagonal boron nitride monolayers;Nanotechnology;2023-10-05

3. A Review of Scalable Hexagonal Boron Nitride ( h ‐BN) Synthesis for Present and Future Applications;Advanced Materials;2022-12-16

4. Resistive switching properties of monolayer h-BN atomristors with different electrodes;Applied Physics Letters;2022-04-25

5. Realization of electronic grade graphene and h-BN;Defects in Two-Dimensional Materials;2022