Tunable Tunneling Magnetoresistance in van der Waals Magnetic Tunnel Junctions with 1T-CrTe2 Electrodes-Reference-Cited by-同舟云学术

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Tunable Tunneling Magnetoresistance in van der Waals Magnetic Tunnel Junctions with 1T-CrTe2 Electrodes

Published:2020-12-30 Issue:1 Volume:13 Page:1214-1221
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhou Hangyu¹²³^ORCID,Zhang Youguang¹,Zhao Weisheng²^ORCID

Affiliation:

1. School of Electronic and Information Engineering, Beihang University, Beijing 100191, China

2. School of Integrated Circuit Science and Engineering, MIIT Key Laboratory of Spintronics, Beihang University, Beijing 100191, China

3. Shenyuan Honors College, Beihang University, Beijing 100191, China

Funder

Ministry of Science and Technology of the People's Republic of China

Beijing Municipal Science and Technology Commission

National Natural Science Foundation of China

Program of Introducing Talents of Discipline to Universities

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c17829

Reference55 articles.

1. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

2. High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

3. A new spin on magnetic memories

4. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

5. Giant tunneling magnetoresistance up to 330% at room temperature in sputter deposited Co2FeAl/MgO/CoFe magnetic tunnel junctions

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