Ultrawide Band Gap Oxide Semiconductor-Triggered Performance Improvement of Perovskite Solar Cells via the Novel Ga2O3/SnO2 Composite Electron-Transporting Bilayer-Reference-Cited by-同舟云学术

Ultrawide Band Gap Oxide Semiconductor-Triggered Performance Improvement of Perovskite Solar Cells via the Novel Ga2O3/SnO2 Composite Electron-Transporting Bilayer

Published:2020-11-26 Issue:49 Volume:12 Page:54703-54710
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Dong Hang¹²,Pang Shangzheng²,Xu Yu²,Li Zhe²,Zhang Zeyang¹²,Zhu Weidong¹²^ORCID,Chen Dazheng¹²^ORCID,Xi He²^ORCID,Lin Zhenhua¹²^ORCID,Zhang Jincheng¹²^ORCID,Hao Yue²,Zhang Chunfu¹²^ORCID

Affiliation:

1. Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi’an 710071, China

2. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c16168

Reference31 articles.

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3. Enhanced electron extraction using SnO2 for high-efficiency planar-structure HC(NH2)2PbI3-based perovskite solar cells

4. Efficient and stable Ruddlesden–Popper perovskite solar cell with tailored interlayer molecular interaction

5. An internally photoemitted hot carrier solar cell based on organic-inorganic perovskite

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