Monolithic Barrier-All-Around High Electron Mobility Transistor with Planar GaAs Nanowire Channel
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois, Urbana, Illinois 61801, United States
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl400620f
Reference27 articles.
1. Electrical Characterizations of InGaAs Nanowire-Top-Gate Field-Effect Transistors by Selective-Area Metal Organic Vapor Phase Epitaxy
2. GaAs MESFET With a High-Mobility Self-Assembled Planar Nanowire Channel
3. Realization of Unidirectional Planar GaAs Nanowires on GaAs (110) Substrates
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