Electrically Engineered Band Gap in Two-Dimensional Ge, Sn, and Pb: A First-Principles and Tight-Binding Approach-Reference-Cited by-同舟云学术

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Electrically Engineered Band Gap in Two-Dimensional Ge, Sn, and Pb: A First-Principles and Tight-Binding Approach

Published:2015-05-12 Issue:21 Volume:119 Page:11896-11902
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kaloni Thaneshwor P.¹,Modarresi Mohsen²,Tahir Muhammad³,Roknabadi Mahmood Rezaee²,Schreckenbach Georg¹,Freund Michael S.¹

Affiliation:

1. Department of Chemistry, University of Manitoba, Winnipeg, Manitoba R3T 2N2, Canada

2. Department of Physics, Ferdowsi University of Mashhad, Mashhad, Iran

3. Department of Physics, Concordia University, 7141 Sherbrooke Ouest, Montréal, Quebec H4B 1R6, Canada

Funder

Natural Sciences and Engineering Research Council of Canada

Canada Foundation for Innovation

Canada Research Chairs

Manitoba Research and Innovation Fund

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp512993y

Reference66 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

3. Van der Waals heterostructures

4. Strain engineering of WS2, WSe2, and WTe2

5. Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium

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