Vanadium-Doping-Induced Resonant Energy Levels for the Enhancement of Thermoelectric Performance in Hf-Free ZrNiSn Half-Heusler Alloys-Reference-Cited by-同舟云学术

Vanadium-Doping-Induced Resonant Energy Levels for the Enhancement of Thermoelectric Performance in Hf-Free ZrNiSn Half-Heusler Alloys

Published:2018-01-19 Issue:2 Volume:1 Page:757-764
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Chauhan Nagendra S.¹²^ORCID,Bathula Sivaiah¹²^ORCID,Vishwakarma Avinash¹²,Bhardwaj Ruchi¹²,Gahtori Bhasker¹²,Kumar Anil²,Dhar Ajay¹²^ORCID

Affiliation:

1. Academy of Scientific & Innovative Research (AcSIR), CSIR-National Physical Laboratory, New Delhi 110012, India

2. Division of Advanced Materials and Devices, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012, India

Funder

Board of Research in Nuclear Sciences

Council for Scientific and Industrial Research

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.7b00203

Reference64 articles.

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5. Conducting grain boundaries enhancing thermoelectric performance in doped Mg2Si

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