Solution-Processed Barium Salts as Charge Injection Layers for High Performance N-Channel Organic Field-Effect Transistors

Author:

Kim Nam-Koo1,Khim Dongyoon1,Xu Yong2,Lee Seung-Hoon1,Kang Minji1,Kim Jihong1,Facchetti Antonio3,Noh Yong-Young2,Kim Dong-Yu1

Affiliation:

1. Department of Nanobio Materials and Electronics, School of Material Science and Engineering, Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712, Republic of Korea

2. Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea

3. Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, United States

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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