Obtaining High Localized Spin Magnetic Moments by Fluorination of Reduced Graphene Oxide-Reference-Cited by-同舟云学术

Obtaining High Localized Spin Magnetic Moments by Fluorination of Reduced Graphene Oxide

Published:2013-07-24 Issue:8 Volume:7 Page:6729-6734
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Feng Qian¹²,Tang Nujiang¹,Liu Fuchi¹,Cao Qingqi¹,Zheng Wenhai¹,Ren Wencai³,Wan Xiangang¹,Du Youwei¹

Affiliation:

1. Physics Department & Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China

2. College of Physics and Energy, Fujian Normal University, Fuzhou 350007, People’s Republic of China

3. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn4027905

Reference32 articles.

1. Electronic spin transport and spin precession in single graphene layers at room temperature

2. Observation of Long Spin-Relaxation Times in Bilayer Graphene at Room Temperature

3. Localized Magnetic States in Graphene

4. Defect-induced magnetism in graphene

5. Magnetic moments in the presence of topological defects in graphene

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