Nanoscale Dispersions of Gelled SnO2: Material Properties and Device Applications-Reference-Cited by-同舟云学术

Nanoscale Dispersions of Gelled SnO2: Material Properties and Device Applications

Published:2013-11-27 Issue:23 Volume:25 Page:4725-4730
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Bob Brion¹,Song Tze-Bin¹,Chen Chun-Chao¹,Xu Zheng¹,Yang Yang¹

Affiliation:

1. Department of Materials Science and Engineering and California NanoSystems Institute, University of California at Los Angeles, Los Angeles, California 90025, United States

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm402462m

Reference25 articles.

1. Fully Transparent Thin-Film Transistor Devices Based on SnO2 Nanowires

2. Tin oxide transparent thin-film transistors

3. High-mobility transparent thin-film transistors with an Sb-doped SnO2nanocrystal channel fabricated at room temperature

4. SnO2-Based Dye-Sensitized Hybrid Solar Cells Exhibiting Near Unity Absorbed Photon-to-Electron Conversion Efficiency

5. Carrier Generation and Collection in CdS/CdSe-Sensitized SnO2 Solar Cells Exhibiting Unprecedented Photocurrent Densities

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