Toward Self-Assembled Ferroelectric Random Access Memories: Hard-Wired Switching Capacitor Arrays with Almost Tb/in.2 Densities-Reference-Cited by-同舟云学术

Toward Self-Assembled Ferroelectric Random Access Memories: Hard-Wired Switching Capacitor Arrays with Almost Tb/in.2 Densities

Published:2007-04-04 Issue:5 Volume:7 Page:1134-1137
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Evans Paul R.¹,Zhu XinHau¹,Baxter Paul¹,McMillen Mark¹,McPhillips John¹,Morrison Finlay D.¹,Scott James F.¹,Pollard Robert J.¹,Bowman Robert M.¹,Gregg J. Marty¹

Affiliation:

1. Centre for Nanostructured Media, School of Maths and Physics, Queen's University Belfast, Belfast BT7 1NN, United Kingdom, and Department of Earth Sciences, University of Cambridge, Cambridge CB2 3EQ, United Kingdom

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl0626028

Reference30 articles.

1. Scott, J. F.Ferroelectric Memories; Springer−Verlag: Berlin, 2000.

2. Recent Materials Characterizations of [2D] and [3D] Thin Film Ferroelectric Structures

3. Physics of thin-film ferroelectric oxides

4. Scanning resistive probe microscopy: Imaging ferroelectric domains

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