Possibility of a Field Effect Transistor Based on Dirac Particles in Semiconducting Anatase-TiO2 Nanowires-Reference-Cited by-同舟云学术

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Possibility of a Field Effect Transistor Based on Dirac Particles in Semiconducting Anatase-TiO2 Nanowires

Published:2013-02-13 Issue:3 Volume:13 Page:1073-1079
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Deák Peter¹,Aradi Bálint¹,Gagliardi Alessio¹²,Huy Huynh Anh¹,Penazzi Gabriele¹,Yan Binghai¹,Wehling Tim¹³,Frauenheim Thomas¹

Affiliation:

1. Bremen Center for Computational Materials Science, University of Bremen, Am Fallturm 1, D-28359, Bremen, Germany

2. Department of Electronic Engineering, University of Rome “Tor Vergata”, via del Politecnico 1, I-00133 Roma, Italy

3. Institute for Theoretical Physics, University of Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl304350v

Reference50 articles.

1. The rise of graphene

2. The electronic properties of graphene

3. Colloquium: The transport properties of graphene: An introduction

4. The quantum spin Hall effect and topological insulators

5. The birth of topological insulators

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