Strain and Shape of Epitaxial InAs/InP Nanowire Superlattice Measured by Grazing Incidence X-ray Techniques-Reference-Cited by-同舟云学术

Strain and Shape of Epitaxial InAs/InP Nanowire Superlattice Measured by Grazing Incidence X-ray Techniques

Published:2007-08-28 Issue:9 Volume:7 Page:2596-2601
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Eymery Joël¹,Rieutord François¹,Favre-Nicolin Vincent¹,Robach Odile¹,Niquet Yann-Michel¹,Fröberg Linus¹,Mårtensson Thomas¹,Samuelson Lars¹

Affiliation:

1. CEA Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, Service des Matériaux et Microstructures, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France, and Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl070888q

Reference17 articles.

1. Imaging and analysis of nanowires

2. Structural properties of 〈111〉B -oriented III–V nanowires

3. Epitaxial growth of InP nanowires on germanium

4. Epitaxially grown GaP/GaAs1−xPx/GaP double heterostructure nanowires for optical applications

5. High-resolution x-ray diffraction analysis of epitaxially grown indium phosphide nanowires

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