Gd4Ge3–xPnx (Pn = P, Sb, Bi, x = 0.5–3): Stabilizing the Nonexisting Gd4Ge3 Binary through Valence Electron Concentration. Electronic and Magnetic Properties of Gd4Ge3

Gd4Ge3–xPnx (Pn = P, Sb, Bi, x = 0.5–3): Stabilizing the Nonexisting Gd4Ge3 Binary through Valence Electron Concentration. Electronic and Magnetic Properties of Gd4Ge3–xPnx

Published:2012-09-14 Issue:19 Volume:51 Page:10169-10175
ISSN:0020-1669
Container-title:Inorganic Chemistry
language:en
Short-container-title:Inorg. Chem.

Author:

Cheung Yan Yin Janice¹,Svitlyk Volodymyr²,Mozharivskyj Yurij¹

Affiliation:

1. Department of Chemistry and Chemical Biology, McMaster University, Hamilton, Ontario, L8S 4M1, Canada

2. Institut für Anorganische und Analytische Chemie, Universität Münster, Corrensstrasse 30, D-48149 Münster, Germany

Publisher

American Chemical Society (ACS)

Subject

Inorganic Chemistry,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/ic300817j

Reference39 articles.

1. Gd5−xYxTt4 (Tt = Si or Ge): Effect of Metal Substitution on Structure, Bonding, and Magnetism

2. Magnetocaloric effect in Tb5(SixGe1−x)4

3. Magnetic and structural phase diagram ofTb5(SixGe1−x)4

4. Electron-Precise/Deficient La5-xCaxGe4 (3.4 ≤ x ≤ 3.8) and Ce5-xCaxGe4 (3.0 ≤ x ≤ 3.3): Probing Low-Valence Electron Concentrations in Metal-Rich Gd5Si4-type Germanides

5. Structure and Bonding in Yb4MgGe4: Yb2+/Yb3+ Mixed-Valency and Charge Separation

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3. ChemInform Abstract: Gd4Ge3-xPnx(Pn: P, Sb, Bi, x = 0.5-3): Stabilizing the Nonexisting Gd4Ge3Binary Through Valence Electron Concentration. Electronic and Magnetic Properties of Gd4Ge3-xPnx.;ChemInform;2012-11-29