Heterostructure and Compositional Depth Profile of Low-Temperature Processed Lead Titanate-Based Ferroelectric Thin Films Prepared by Photochemical Solution Deposition

Author:

Bretos I.1,Jiménez R.1,Rodriguez-Castellón E.1,García-López J.1,Calzada M. L.1

Affiliation:

1. Instituto de Ciencia de Materiales de Madrid, C.S.I.C., Cantoblanco 28049 Madrid, Spain; Departamento de Química Inorgánica, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga, Spain; and Centro Nacional de Aceleradores (C.N.A.), Parque Tecnológico Cartuja 93, 41092 Sevilla, Spain

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Reference40 articles.

1. Ferroelectric thin films: Review of materials, properties, and applications

2. Ferroelectric Memories

3. The Physics of Ferroelectric Memories

4. Semiconductor Industry Association, International Technology Roadmap for Semiconductors, International SEMATECH, Austín TX,2005, available athttp://public.itrs.net.

5. Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories

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