Nanosecond Spin Lifetimes in Single- and Few-Layer Graphene–hBN Heterostructures at Room Temperature-Reference-Cited by-同舟云学术

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Nanosecond Spin Lifetimes in Single- and Few-Layer Graphene–hBN Heterostructures at Room Temperature

Published:2014-10-07 Issue:11 Volume:14 Page:6050-6055
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Drögeler Marc¹,Volmer Frank¹,Wolter Maik¹,Terrés Bernat¹²,Watanabe Kenji³,Taniguchi Takashi³,Güntherodt Gernot¹,Stampfer Christoph¹²,Beschoten Bernd¹

Affiliation:

1. 2nd Institute of Physics and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany

2. Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany

3. National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

Funder

European Commission

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl501278c

Reference37 articles.

1. Electronic spin transport and spin precession in single graphene layers at room temperature

2. Observation of Long Spin-Relaxation Times in Bilayer Graphene at Room Temperature

3. Toward Wafer Scale Fabrication of Graphene Based Spin Valve Devices

4. Role of MgO barriers for spin and charge transport in Co/MgO/graphene nonlocal spin-valve devices

5. Electronic spin transport in graphene field-effect transistors

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