Time-of-Flight Current Shapes in Molecularly Doped Polymers: Effects of Sample Thickness and Irradiation Side and Carrier Generation Width-Reference-Cited by-同舟云学术

Time-of-Flight Current Shapes in Molecularly Doped Polymers: Effects of Sample Thickness and Irradiation Side and Carrier Generation Width

Published:2014-02-26 Issue:10 Volume:118 Page:5150-5158
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Tyutnev Andrey P.¹,Weiss David S.²,Dunlap David H.³,Saenko Vladimir S.¹

Affiliation:

1. National Research University Higher School of Economics, 20 Miasnitskaya Ulitsa, Moscow 101000, Russia

2. Department of Chemical Engineering, University of Rochester, Rochester, New York 14627, United States

3. Department of Physics and Astronomy and Consortium of the Americas for Interdisciplinary Studies, 1919 Lomas Blvd NE, Albuquerque, New Mexico 87131, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp411377r

Reference33 articles.

1. Charge Transport in Organic Semiconductors

2. Advances in Organic Photoconductor Technology

3. Charge Transport in Organic Semiconductors

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