High Performance n-Type Field-Effect Transistors Based on Indenofluorenedione and Diindenopyrazinedione Derivatives-Reference-Cited by-同舟云学术

High Performance n-Type Field-Effect Transistors Based on Indenofluorenedione and Diindenopyrazinedione Derivatives

Published:2008-03-20 Issue:8 Volume:20 Page:2615-2617
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Nakagawa Tomohiro¹,Kumaki Daisuke¹,Nishida Jun-ichi¹,Tokito Shizuo¹,Yamashita Yoshiro¹

Affiliation:

1. Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan, and NHK Science and Technical Research Laboratories, Kinuta, Setagata-ku, Tokyo 157-8510, Japan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm800366b

Reference15 articles.

1. Recent Advances in Semiconductor Performance and Printing Processes for Organic Transistor-Based Electronics

2. Introduction to Organic Thin Film Transistors and Design of n-Channel Organic Semiconductors

3. Organic Semiconducting Oligomers for Use in Thin Film Transistors

4. Advances in organic field-effect transistors

5. Synthesis and Characterization of Electron-Deficient Pentacenes

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