Accurate Indium Bond Energies
Author:
Affiliation:
1. Mail Stop 230-3, NASA Ames Research Center, Moffett Field, California 94035
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp990967t
Reference37 articles.
1. Heats of Formation of GaCl3 and Its Fragments
2. Correlation consistent basis sets for indium
3. Electronic states, ionization potentials, and bond energies of TlHn, InHn, TlH+n, and InH+n (n=1–3)
4. Model calculations for halogen‐etching of GaAs and InSb. Potential‐energy surfaces for GaAs+Cl, GaAs+Br, InSb+Cl, and InSb+Br reactions
5. The accuracy of the pseudopotential approximation. I. An analysis of the spectroscopic constants for the electronic ground states of InCl and InCl3using various three valence electron pseudopotentials for indium
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