Modulating the Growth of Epitaxial MoS<sub>2</sub> on Au(111) Surfaces <i>via</i> an Ultra-High-Vacuum-Interconnected Apparatus-Reference-Cited by-同舟云学术

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Modulating the Growth of Epitaxial MoS₂ on Au(111) Surfaces via an Ultra-High-Vacuum-Interconnected Apparatus

Published:2024-02-07 Issue:4 Volume:7 Page:3931-3938
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Lei Hao¹²^ORCID,Wei Wei¹^ORCID,Gong Zhongmiao¹²^ORCID,Li Hao¹²^ORCID,Cui Yi¹^ORCID

Affiliation:

1. i-Lab, Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, The Chinese Academy of Sciences, Suzhou 215123, China

2. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c05548

Reference54 articles.

1. Van der Waals thin-film electronics

2. Ultrasensitive photodetectors based on monolayer MoS2

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

5. Disorder in van der Waals heterostructures of 2D materials

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