Subthreshold Current Suppression in ReS<sub>2</sub> Nanosheet-Based Field-Effect Transistors at High Temperatures-Reference-Cited by-同舟云学术

Subthreshold Current Suppression in ReS₂ Nanosheet-Based Field-Effect Transistors at High Temperatures

Published:2023-11-16 Issue:23 Volume:6 Page:21663-21670
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Durante Ofelia¹,Intonti Kimberly¹,Viscardi Loredana¹,De Stefano Sebastiano¹,Faella Enver¹,Kumar Arun¹,Pelella Aniello²,Romeo Francesco¹,Giubileo Filippo³^ORCID,Alghamdi Manal Safar G.⁴,Alshehri Mohammed Ali S.⁴,Craciun Monica F⁴,Russo Saverio⁴^ORCID,Di Bartolomeo Antonio¹^ORCID

Affiliation:

1. Department of Physics “E. R. Caianiello”, University of Salerno, via Giovanni Paolo II 132, Fisciano, 84084 Salerno, Italy

2. Department of Science and Technology, Università degli studi del Sannio, via dei mulini 59/A, Benevento 82100, Italy

3. CNR-SPIN, via Giovanni Paolo II 132, Fisciano, 84084 Salerno, Italy

4. University of Exeter, Stocker Road 6, Exeter EX4 4QL, Devon, U.K.

Funder

Engineering and Physical Sciences Research Council

Leverhulme Trust

European Commission

Universit? degli Studi di Salerno

H2020 Marie Sklodowska-Curie Actions

Ministero dell'Istruzione, dell'Universit? e della Ricerca