Impact of Interlayer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode-Reference-Cited by-同舟云学术

Impact of Interlayer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode

Published:2013-01-23 Issue:3 Volume:5 Page:958-964
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chandramohan S.¹,Kang Ji Hye¹,Ryu Beo Deul¹,Yang Jong Han¹,Kim Seongjun¹,Kim Hynsoo¹,Park Jong Bae²,Kim Taek Yong³,Cho Byung Jin³,Suh Eun-Kyung¹,Hong Chang-Hee¹

Affiliation:

1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, South Korea

2. Korea Basic Science Institute (KBSI), Jeonju Center, 664-14 Dukjin dong 1-ga, Dukjin-gu, Jeonju 561-756, South Korea

3. Department of Electrical Engineering, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 305 701, South Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am3026079

Reference39 articles.

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2. Graphene-Based Electrodes

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4. Metal/graphene sheets as p-type transparent conducting electrodes in GaN light emitting diodes

5. Work-function-tuned multilayer graphene as current spreading electrode in blue light-emitting diodes

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