Modulation Doping of GaAs/AlGaAs Core–Shell Nanowires With Effective Defect Passivation and High Electron Mobility-Reference-Cited by-同舟云学术

Modulation Doping of GaAs/AlGaAs Core–Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Published:2015-01-28 Issue:2 Volume:15 Page:1336-1342
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Boland Jessica L.¹,Conesa-Boj Sonia,Parkinson Patrick¹,Tütüncüoglu Gözde,Matteini Federico,Rüffer Daniel,Casadei Alberto,Amaduzzi Francesca,Jabeen Fauzia,Davies Christopher L.¹,Joyce Hannah. J.²,Herz Laura M.¹,Fontcuberta i Morral Anna,Johnston Michael B.¹

Affiliation:

1. Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, United Kingdom

2. Centre for Advanced Photonics and Electronics, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Schweizerische Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Royal Commission for the Exhibition of 1851

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl504566t

Reference51 articles.

1. Nanowire electronic and optoelectronic devices

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3. Single nanowire photovoltaics

4. Law, M.; Greene, L. E.; Johnson, J. C.; Saykally, R.; Yang, P. D. (2005, 4, 455–459.

5. GaN nanowire lasers with low lasing thresholds

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