Facilitating the Hydrogen Evolution Reaction on Basal-Plane S Sites on MoS2@Ni3S2 by Dual Ti and N Plasma Treatment

Author:

Pang Ning1,Li Yun2,Wang Chang3,Tong Xin145,Wang Mengqiu1,Shi Huiyun1,Wu Dajun4ORCID,Xiong Dayuan1,Xu Shaohui1ORCID,Sorokin Pavel B.67,Wang Lianwei1ORCID,Jiang Lin3ORCID,Chu Paul K.5ORCID

Affiliation:

1. Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, P. R. China

2. School of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, P. R. China

3. School of Microelectronics, Shanghai University, 20 Chengzhong Road, Shanghai 201800, P. R. China

4. Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, P. R. China

5. Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China

6. National University of Science and Technology “MISIS”, Leninsky prospect 4, Moscow 119049, Russian Federation

7. Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Moscow 142190, Russia

Funder

Department of Education of Guangdong Province

City University of Hong Kong

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Shenzhen-Hong Kong Innovative Collaborative Research and Development Program

Shanghai High-level Talent start funding

Publisher

American Chemical Society (ACS)

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