High Sensitive and Stable UV–Vis Photodetector Based on MoS<sub>2</sub>/MoO<sub>3</sub> vdW Heterojunction-Reference-Cited by-同舟云学术

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High Sensitive and Stable UV–Vis Photodetector Based on MoS₂/MoO₃ vdW Heterojunction

Published:2024-06-24 Issue:26 Volume:16 Page:33829-33837
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Haoyu¹,Zhang Tian¹,Yi Zixuan¹,Chen Xingyu¹,Dai Zhigao¹,Tan Jin¹^ORCID

Affiliation:

1. Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China

Funder

Key R&D Plan of Hubei Province

GaN epitaxy and preparation of semiconductor power devices

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c06403

Reference61 articles.

1. AlGaN photonics: recent advances in materials and ultraviolet devices

2. Ultrafast Solar-Blind Ultraviolet Detection by Inorganic Perovskite CsPbX3Quantum Dots Radial Junction Architecture

3. Ultraviolet Narrowband Photomultiplication Type Organic Photodetectors with Fabry−Pérot Resonator Architecture

4. High-Performance Solar-Blind UV Phototransistors Based on ZnO/Ga₂O₃ Heterojunction Channels

5. A UV-Responsive Multifunctional Photoelectric Device Based on Discotic Columnar Nanostructures and Molecular Motors

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