Rational Design of Cu Vacancies and Antisite Defects for Boosting the Thermoelectric Properties of CuGaTe<sub>2</sub>-Based Compounds-Reference-Cited by-同舟云学术

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Rational Design of Cu Vacancies and Antisite Defects for Boosting the Thermoelectric Properties of CuGaTe₂-Based Compounds

Published:2024-07-18 Issue:30 Volume:16 Page:39495-39505
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Tang Yingfei¹,Liu Keke¹,Liao Lin¹,Wu Jinsong¹^ORCID,Su Xianli¹^ORCID,Zhang Qingjie¹,Poudeu Pierre Ferdinand Poudeu²^ORCID,Tang Xinfeng¹^ORCID

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China

2. Laboratory for Emerging Energy and Electronic Materials (LE3M), Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c08924

Reference53 articles.

1. High-entropy-stabilized chalcogenides with high thermoelectric performance

2. Understanding the asymmetrical thermoelectric performance for discovering promising thermoelectric materials

3. Thermal conductivity in Bi 0.5 Sb 1.5 Te 3+ x and the role of dense dislocation arrays at grain boundaries

4. Advances in thermoelectric materials research: Looking back and moving forward

5. New and Old Concepts in Thermoelectric Materials

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