Predeposition Chemistry Underlying the Formation of Germanium Films by CVD of Tetravinylgermane-Reference-Cited by-同舟云学术

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Predeposition Chemistry Underlying the Formation of Germanium Films by CVD of Tetravinylgermane

Published:1994-10 Issue:10 Volume:6 Page:1620-1626
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Harrison Philip G.,de Cointet Chantal,Podesta David M.,Mazerolles Pierre,Morancho Roland,Reynes Alex,Ograb Djarolla

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm00046a010

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Vapor Deposition of Elemental Crystallogen Thin Films;ECS Journal of Solid State Science and Technology;2024-04-01

2. Si Cvd Fundamentals Revisited;2023

3. Atmospheric pressure metal organic chemical vapor deposition of thin germanium films;Journal of Materials Science;2021-02-16

4. The gas phase thermolysis and oxidative thermolysis of some homoleptic tetraalkylstannanes: An FT-IR study;Journal of Organometallic Chemistry;1995-02

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