Current Understanding of the Fundamental Mechanisms of Doped and Loaded Semiconducting Metal-Oxide-Based Gas Sensing Materials-Reference-Cited by-同舟云学术

Current Understanding of the Fundamental Mechanisms of Doped and Loaded Semiconducting Metal-Oxide-Based Gas Sensing Materials

Published:2019-07-31 Issue:9 Volume:4 Page:2228-2249
ISSN:2379-3694
Container-title:ACS Sensors
language:en
Short-container-title:ACS Sens.

Author:

Degler David¹,Weimar Udo²,Barsan Nicolae²^ORCID

Affiliation:

1. Faculty of Industrial Technologies, Furtwangen University, D-78532 Tuttlingen, Germany

2. Institute of Physical and Theoretical Chemistry and Centre for Light-Matter Interaction, Sensors & Analytics (LISA+), University of Tübingen, D-72076 Tübingen, Germany

Publisher

American Chemical Society (ACS)

Subject

Fluid Flow and Transfer Processes,Process Chemistry and Technology,Instrumentation,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acssensors.9b00975

Reference118 articles.

1. Progress in the development of semiconducting metal oxide gas sensors: a review

2. Semiconductor gas sensors

3. Highly sensitive and selective gas sensors using p-type oxide semiconductors: Overview

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