Electrical Double Layer-Induced Ion Surface Accumulation for Ultrasensitive Refractive Index Sensing with Nanostructured Porous Silicon Interferometers-Reference-Cited by-同舟云学术

Electrical Double Layer-Induced Ion Surface Accumulation for Ultrasensitive Refractive Index Sensing with Nanostructured Porous Silicon Interferometers

Published:2018-01-04 Issue:3 Volume:3 Page:595-605
ISSN:2379-3694
Container-title:ACS Sensors
language:en
Short-container-title:ACS Sens.

Author:

Mariani Stefano¹,Strambini Lucanos Marsilio²,Barillaro Giuseppe¹²^ORCID

Affiliation:

1. Dipartimento di Ingegneria dell’Informazione, Università di Pisa, via G. Caruso 16, 56122 Pisa, Italy

2. Istituto di Elettronica e di Ingegneria dell’Informazione e delle Telecomunicazioni, Consiglio Nazionale delle Ricerche, via G. Caruso 16, 56122 Pisa, Italy

Funder

Ministero dell?Istruzione, dell?Universit? e della Ricerca

Publisher

American Chemical Society (ACS)

Subject

Fluid Flow and Transfer Processes,Process Chemistry and Technology,Instrumentation,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acssensors.7b00650

Reference49 articles.

1. On the performance quantification of resonant refractive index sensors

2. Sensitive optical biosensors for unlabeled targets: A review

3. Surface Plasmon Resonance Clinical Biosensors for Medical Diagnostics

4. Nanoplasmonic sensors for biointerfacial science

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