On MoS2 Thin-Film Transistor Design Consideration for a NO2 Gas Sensor-Reference-Cited by-同舟云学术

On MoS2 Thin-Film Transistor Design Consideration for a NO2 Gas Sensor

Published:2019-10-16 Issue:11 Volume:4 Page:2930-2936
ISSN:2379-3694
Container-title:ACS Sensors
language:en
Short-container-title:ACS Sens.

Author:

Im Healin¹,AlMutairi AbdulAziz²^ORCID,Kim Sehwan¹,Sritharan Mayuri²,Kim Sunkook¹,Yoon Youngki²^ORCID

Affiliation:

1. School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 440-745, Republic of Korea

2. Department of Electrical and Computer Engineering & Waterloo Institute for Nanotechnology (WIN), University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

Funder

National Research Foundation of Korea

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

Fluid Flow and Transfer Processes,Process Chemistry and Technology,Instrumentation,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acssensors.9b01307

Reference27 articles.

1. Two-dimensional layered nanomaterials for gas-sensing applications

2. MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors

3. Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

4. Gas sensing in 2D materials

5. Chemical Vapor Sensing with Monolayer MoS2

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