Photoelectrochemical Behavior of n-type Si(100) Electrodes Coated with Thin Films of Manganese Oxide Grown by Atomic Layer Deposition-Reference-Cited by-同舟云学术

Photoelectrochemical Behavior of n-type Si(100) Electrodes Coated with Thin Films of Manganese Oxide Grown by Atomic Layer Deposition

Published:2013-02-06 Issue:10 Volume:117 Page:4931-4936
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Strandwitz Nicholas C.¹,Comstock David J.²,Grimm Ronald L.¹,Nielander Adam C.¹,Elam Jeffrey²,Lewis Nathan S.¹

Affiliation:

1. Division of Chemistry and Chemical Engineering, Beckman Institute and Kavli Nanoscience Institute, 210 Noyes Laboratory, California Institute of Technology, Pasadena, California 91125, United States

2. Energy Systems Division, Argonne National Laboratory, Argonne, Illinois 60439, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp311207x

Reference49 articles.

1. Photodecomposition of semiconductors thermodynamics, kinetics and application to solar cells

2. XPS and AES studies on iron‐oxide‐coated Si photoanodes with a negative flatband potential

3. Photoelectrochemical Behavior of Iron Oxide/n‐Si Heterojunction Electrodes with an Outer Pd Layer

4. Structural analysis of iron oxide coated n-silicon heterojunction photoanodes

5. Characteristics of photoelectrochemical cells with iron oxide/n-Si heterojunction photoanodes

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