Metal Distributions, Efficient n-Type Doping, and Evidence for in-Gap States in TiNiMySn (M = Co, Ni, Cu) half-Heusler Nanocomposites-Reference-Cited by-同舟云学术

Metal Distributions, Efficient n-Type Doping, and Evidence for in-Gap States in TiNiMySn (M = Co, Ni, Cu) half-Heusler Nanocomposites

Published:2015-03-20 Issue:7 Volume:27 Page:2449-2459
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Downie Ruth A.¹,Smith Ronald I.²,MacLaren Donald A.³,Bos Jan-Willem G.¹

Affiliation:

1. Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom

2. ISIS Facility, Rutherford Appleton Laboratory, Harwell Oxford, Didcot OX11 0QX, United Kingdom

3. SUPA, School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Royal Society

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm5045682

Reference44 articles.

1. Perspectives on thermoelectrics: from fundamentals to device applications

2. Bulk nanostructured thermoelectric materials: current research and future prospects

3. Complex thermoelectric materials

4. Recent progress of half-Heusler for moderate temperature thermoelectric applications

5. Recent Advances in Nanostructured Thermoelectric Half-Heusler Compounds

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