Chemical Vapor Deposition of Cerium Oxide Films from a Cerium Alkoxide Precursor
Author:
Affiliation:
1. Department of Chemistry and Center for Materials Chemistry, University of Houston, Houston, Texas 77204-5003
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm035392y
Reference40 articles.
1. Synthesis and Characterization of Volatile, Fluorine-Free β-Ketoiminate Lanthanide MOCVD Precursors and Their Implementation in Low-Temperature Growth of Epitaxial CeO2 Buffer Layers for Superconducting Electronics
2. Chemical Vapor Deposition of Cerium Oxide Using the Precursors [Ce(hfac)3(glyme)]
3. The use of Ce(fod)4 as a precursor for the growth of ceria films by metal-organic chemical vapour deposition
4. Thin film growth and microstructure analysis of CeO2 prepared by MOCVD
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