Three-Dimensional Etching Profiles and Surface Speciations (via Attenuated Total Reflection-Fourier Transform Infrared Spectroscopy) of Silicon Nanowires in NH4F-Buffered HF Solutions: A Double Passivation Model-Reference-Cited by-同舟云学术

Three-Dimensional Etching Profiles and Surface Speciations (via Attenuated Total Reflection-Fourier Transform Infrared Spectroscopy) of Silicon Nanowires in NH4F-Buffered HF Solutions: A Double Passivation Model

Published:2005-11-01 Issue:46 Volume:109 Page:21716-21724
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Teo Boon K.¹,Chen W. W.¹,Sun X. H.¹,Wang S. D.¹,Lee S. T.¹

Affiliation:

1. Department of Chemistry, University of Illinois at Chicago, 845 West Taylor Street, Chicago, Illinois 60607, and Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp052984q

Reference63 articles.

1. Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

2. Chemical etching of vicinal Si(111): Dependence of the surface structure and the hydrogen termination on the pH of the etching solutions

3. Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces

4. Oxidation processes on the H2O-chemisorbed Si(100) surface studied by in-situ infrared spectroscopy

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