Temperature-Dependent Field Emission Properties of 3C-SiC Nanoneedles
Author:
Affiliation:
1. College of Material Science and Engineering, Taiyuan University of Technology, Taiyuan City, 030024, P.R. China
2. Institute of Materials, Ningbo University of Technology, Ningbo City, 315016, P.R. China
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp202359g
Reference49 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
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4. Inorganic semiconductor nanostructures and their field-emission applications
5. Oriented Silicon Carbide Nanowires: Synthesis and Field Emission Properties
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