Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers-Reference-Cited by-同舟云学术

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Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers

Published:2010-08-17 Issue:9 Volume:10 Page:3572-3576
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zhu Wenjuan¹,Neumayer Deborah¹,Perebeinos Vasili¹,Avouris Phaedon¹

Affiliation:

1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl101832y

Reference40 articles.

1. The electronic properties of graphene

2. Carbon-based electronics

3. Performance of monolayer graphene nanomechanical resonators with electrical readout

4. Fine Structure Constant Defines Visual Transparency of Graphene

5. Ultrahigh electron mobility in suspended graphene

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