Photoelectrochemical and Photoluminescence (PL) Properties of p-Type Porous Silicon/Electrolyte Solution Interface: Potential Dependent PL Spectra as a Result of Size Dependent Quenching-Reference-Cited by-同舟云学术

Photoelectrochemical and Photoluminescence (PL) Properties of p-Type Porous Silicon/Electrolyte Solution Interface: Potential Dependent PL Spectra as a Result of Size Dependent Quenching

Published:1997-06-01 Issue:25 Volume:101 Page:4978-4981
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Noguchi Hidenori¹,Kondo Toshihiro¹,Uosaki Kohei¹

Affiliation:

1. Physical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido University, Sapporo 060, Japan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp970309d

Reference51 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Visible electroluminescence from porous silicon

3. Visible Electroluminescence of Porous Silicon Devices with a Solid State Contact

4. Visible electroluminescence from porous siliconnpheterojunction diodes

5. Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction Diodes

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